| PART |
Description |
Maker |
| AMS3401M23RG |
Super high density cell design for Extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS2319 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS2304 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| QM3007K |
P-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
TY Semiconductor Co., Ltd
|
| WPM3012 WPM3012-3 WPM3012-3TR |
Single P-Channel, -30V, -3.1A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| LS14500EX |
3.6 V Primary lithium-thionyl chloride High energy density AA-size bobbin cell
|
saftbatteries
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| STN4526 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST2304SRG |
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN1810 |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
